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Product Detailed Parameters
- Description：MOSFET BVDSS: 25V~30V SOT23 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：5.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：3V, 10V
- Rds On (Max) @ Id, Vgs：28mOhm @ 5.8A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：16 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：498 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：720mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The DMN3404LQ-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 30V and a continuous drain current of 5.8A at +25°C. The device offers a low on-resistance of 28mΩ at VGS=10V and 42mΩ at VGS=4.5V. Packaged in a standard SOT-23 case, it operates within a temperature range of -55°C to +150°C.
Feature Summary
- Designed for high-efficiency power management applications with minimized on-state resistance.
- Suitable for automotive applications requiring specific change control.
- Qualified under AEC-Q101 standards and capable of PPAP submission.
- Manufactured in IATF 16949 certified facilities.
Applications
- Battery Charging
- Power Management Functions
- DC-DC Converters
- Portable Power Adaptors
Procurement Notes
Verify the 'Q' suffix confirms AEC-Q101 qualification and PPAP capability. Confirm the package matches the standard SOT-23 outline dimensions. Ensure compliance with RoHS 3 and halogen-free requirements as specified in the ordering information section of the datasheet.
Selection Notes
Select this component when automotive-grade reliability and specific change control are required. Evaluate thermal performance against the junction-to-ambient resistance values provided for different mounting conditions. Verify gate drive voltages align with the specified RDS(on) thresholds for optimal efficiency.
Part Context
This part belongs to the DMN3404L series of N-channel enhancement mode MOSFETs. The 'Q' designation specifically denotes the automotive grade variant, distinguishing it from the standard commercial version (DMN3404L-7). Both share identical electrical characteristics but differ in manufacturing quality controls.
Replacement Considerations
The DMN3404L-7 serves as the standard commercial equivalent. Verify that the application does not strictly require the automotive-specific change control documentation associated with the Q-series suffix before substituting.
