DMN3730U-7

$0.41

Description：MOSFET N-CH 30V 750MA SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:c0de33f6818c Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 750MA SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：750mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：460mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id：950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：1.6 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：64.3 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：450mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMN3730U-7

Overview

The DMN3730U-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 30V and a gate-source voltage (VGSS) rating of ±8V. The device offers a static drain-source on-resistance (RDS(ON)) of 460mΩ at VGS=4.5V and 200mA, or 560mΩ at VGS=2.5V and 100mA. Continuous drain current (ID) is rated at 0.94A at TA=+25°C. Total gate charge (Qg) is 1.6nC at VGS=4.5V. Operating temperature range spans from -55°C to +150°C.

Feature Summary

Low gate threshold voltage enables direct battery driving
ESD protected gate structure rated up to 2kV
Totally lead-free and fully RoHS compliant

Applications

Load switches
Portable applications
Power management functions

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the standard reel packaging configuration. Confirm that the component meets all applicable environmental directives for your region. Ensure the design accounts for the thermal resistance characteristics under actual PCB layout conditions rather than idealized test board parameters.

Selection Notes

Select this component when a low-cost, small-footprint N-channel switch is required for 30V systems. Consider the RDS(ON) performance at lower gate voltages if driven directly by batteries. Evaluate the thermal dissipation capabilities against the expected continuous load current in the target application environment.

Part Context

This part belongs to the DMN37 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes a SOT23 surface-mount package designed for space-constrained portable electronics. The device is optimized for high-efficiency power management applications requiring low on-state resistance.