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Product Detailed Parameters
- Description：MOSFET N-CH 30V 750MA 3DFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：750mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：460mOhm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id：950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.6 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：64.3 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：470mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：X2-DFN1006-3
- Package / Case：3-XFDFN
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Overview
The DMN3730UFB4-7 is a single N-channel enhancement mode MOSFET from Diodes Incorporated, housed in an X2-DFN1006-3 surface-mount package. It features a drain-source breakdown voltage of 30V and a continuous drain current of 0.9A at 25°C. The device exhibits a low on-state resistance of 460mΩ at VGS=4.5V and 560mΩ at VGS=2.5V. Key electrical parameters include a gate threshold voltage range of 0.45V to 0.95V, total gate charge of 1.6nC, and power dissipation capability of 0.69W. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Ultra-low profile 0.4mm package with a 0.6mm² footprint for space-constrained designs
- Low gate threshold voltage enabling direct battery drive capabilities
- ESD protected gate structure rated up to 2kV
- Qualified to AEC-Q101 standards for high reliability applications
Applications
- Load Switch
- Portable Applications
- Power Management Functions
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the standard 3,000-unit reel quantity as defined in the manufacturer's documentation. Confirm that the component meets RoHS compliance and halogen-free requirements if environmental regulations apply to the target assembly. Ensure the selected variant matches the required marking code 'NF' for proper identification during automated placement processes.
Selection Notes
Select this component when a compact form factor is critical, as its footprint is significantly smaller than traditional SOT-23 packages. Consider the low gate threshold voltage for systems requiring efficient drive from low-voltage sources like batteries. Evaluate the thermal resistance characteristics against the expected ambient conditions to ensure reliable operation within the specified junction temperature limits.
Part Context
This part belongs to the DMN37 series of N-channel MOSFETs designed by Diodes Incorporated. The series focuses on minimizing on-state resistance while maintaining superior switching performance for high-efficiency power management. The X2-DFN1006-3 package provides a robust solution for modern electronics requiring small footprints and low profiles.
Replacement Considerations
Direct substitutes may include other 30V N-channel MOSFETs in similar DFN packages, such as the DMN3731UFB4-7B, though differences in current ratings and on-resistance must be verified against the specific application requirements.
