DMN3731UFB4-7B

$0.21

Description：MOSFET N-CH 30V 1.2A 3DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:b977c766c61d Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 1.2A 3DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：1.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：460mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id：950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：5.5 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：73 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：520mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：X2-DFN1006-3
Package / Case：3-XFDFN

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DMN3731UFB4-7B

Overview

The DMN3731UFB4-7B is a 30V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes an X2-DFN1006-3 package with a maximum height of 0.4mm and a footprint of 0.6mm². The device features a drain-source breakdown voltage (BVDSS) of 30V, a continuous drain current (ID) of 1.2A at +25°C, and a static drain-source on-resistance (RDS(ON)) of 460mΩ at VGS=4.5V. It operates within a temperature range of -55°C to +150°C.

Feature Summary

Ultra-low profile 0.4mm package design suitable for thin applications
Low gate threshold voltage enabling direct battery drive capability
Integrated ESD protection on the gate terminal

Applications

Load Switch
Portable Applications
Power Management Functions

Procurement Notes

Verify the specific ordering suffix '-7B' against official documentation to confirm reel size, tape width, and pitch specifications. Ensure compliance requirements such as RoHS and halogen-free status are validated against the manufacturer's definitions before procurement.

Selection Notes

Select this component when space constraints require a footprint significantly smaller than standard SOT-23 packages. Consider its low RDS(ON) characteristics for high-efficiency power management designs requiring minimal conduction losses in compact form factors.

Part Context

This part belongs to the DMN3731U family of N-channel enhancement mode MOSFETs from Diodes Incorporated. It shares core electrical characteristics with variants like the DMN3731U but differs in packaging configuration, specifically utilizing the X2-DFN1006-3 case style for reduced physical dimensions.