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Product Detailed Parameters
- Description：MOSFET BVDSS: 25V~30V SOT23 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：460mOhm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id：950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.9 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：40.8 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：420mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The DMN3732U-13 is a 30V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated in an SOT23 package. It features a maximum drain-source voltage (BVDSS) of 30V and a continuous drain current (ID) of 1A at +25°C. The device offers low on-state resistance, with RDS(ON) values of 460mΩ at VGS=4.5V, 560mΩ at VGS=2.5V, and 730mΩ at VGS=1.8V. Gate threshold voltage ranges from 0.45V to 0.95V. Total gate charge is typically 0.9nC. Operating temperature range spans -55°C to +150°C.
Feature Summary
- Designed for high efficiency power management applications with minimized on-state resistance.
- Features fast switching speed and low gate threshold voltage for improved performance.
- Gate is protected against electrostatic discharge (ESD).
- Compliant with RoHS standards and halogen/antimony free.
Applications
- Load switches in portable electronics
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit reel packaging configuration as defined in the manufacturer's ordering information. Confirm that the component meets all applicable environmental compliance requirements, including RoHS and lead-free specifications, prior to integration into final assemblies.
Selection Notes
Select this component when a 30V N-channel MOSFET with low RDS(ON) is required for portable electronics load switching. Ensure the application gate drive voltage aligns with the specified thresholds for optimal conduction characteristics. Verify thermal dissipation capabilities within the SOT23 package constraints for the intended duty cycle.
Part Context
This part belongs to the DMN3732U series of advanced N-channel enhancement mode MOSFETs. It is designed to balance low static resistance with superior dynamic switching performance. The product line targets compact power management solutions where space efficiency and energy conservation are critical design parameters.
Replacement Considerations
Consult the manufacturer's documentation for qualified alternatives or cross-reference options. Verify pinout compatibility, electrical ratings, and package dimensions before substituting any other component in existing designs.
