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Product Detailed Parameters
- Description：MOSFET BVDSS: 25V~30V X2-DFN1006
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：1.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：460mOhm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id：950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.9 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：40.8 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：490mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：X2-DFN1006-3
- Package / Case：3-XFDFN
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Overview
The DMN3732UFB4-7B is a 30V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features an X2-DFN1006-3 package with a maximum drain-source voltage of 30V and a gate-source voltage rating of ±8V. The device provides a continuous drain current of 1.3A at 25°C, with a typical on-resistance of 460mΩ at VGS=4.5V. Operating temperatures range from -55°C to +150°C.
Feature Summary
- Ultra-low profile 0.4mm package with a 0.6mm² footprint for space-constrained designs
- Low gate threshold voltage enabling direct battery drive capability
- ESD protected gate structure for enhanced reliability
- Totally lead-free and fully RoHS compliant construction
Applications
- Load switches
- Portable applications
- Power management functions
Procurement Notes
Verify the specific ordering suffix '-7B' against official documentation to confirm reel size and packing quantity details. Ensure compliance requirements such as RoHS and halogen-free status are validated against the latest manufacturer quality definitions before procurement.
Selection Notes
Select this component when a compact form factor is required alongside low on-state resistance. The low gate threshold voltage supports efficient operation in battery-powered systems. Evaluate thermal performance based on the specific PCB copper area and ambient operating conditions.
Part Context
This part belongs to the DMN3732 series of N-channel MOSFETs designed for high-efficiency power management. It utilizes silicon technology and is housed in an X2-DFN1006-3 package. The product is intended for surface mount applications requiring small footprints.
Replacement Considerations
Consult official datasheets for cross-reference information. Verify pinout compatibility, voltage ratings, and thermal characteristics before substituting with alternative components.
