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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 1.1A TSOT26
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：1.1A (Ta)
- Rds On (Max) @ Id, Vgs：460mOhm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id：950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：40.8pF @ 25V
- Power - Max：500mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：TSOT-26
- Grade：-
- Qualification：-
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Overview
The DMN3732UVT-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a TSOT26 package with a drain-source voltage (BVDSS) of 30V and a gate-source voltage (VGSS) rating of ±8V. The device provides continuous drain currents of 1.1A at +25°C and 0.9A at +70°C, with a maximum pulsed drain current of 2.4A. Static drain-source on-resistance (RDS(ON)) ranges from 310mΩ to 730mΩ depending on the gate drive voltage and drain current conditions. Thermal resistance (junction-to-ambient) is specified at 252°C/W on a minimum pad layout and 150°C/W with an extended copper plate. Operating and storage temperatures span from -55°C to +150°C.
Feature Summary
- Dual N-channel configuration in a compact TSOT26 surface-mount package
- Optimized for low on-state resistance while maintaining fast switching performance
- Low input capacitance and low leakage characteristics for efficient power management
- Fully lead-free, RoHS compliant, and halogen/antimony free construction
Applications
- Backlighting circuits
- DC-DC converters
- Power-management functions
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging quantity and carrier type. The standard tape and reel option contains 3,000 units per carrier. Confirm compliance requirements such as RoHS and halogen-free status directly with the manufacturer's datasheet before procurement. Ensure the selected variant matches the required thermal and electrical specifications for the target application environment.
Selection Notes
Select this component when a dual N-channel MOSFET is required in a small footprint. Evaluate the RDS(ON) values at the intended gate drive voltage to ensure conduction losses are acceptable. Consider the thermal resistance limits based on the PCB copper area available for heat dissipation. Verify that the 30V breakdown voltage and 1.1A continuous current ratings exceed the peak operational demands of the circuit.
Part Context
This part belongs to the DMN3732UVT series of dual N-channel enhancement mode MOSFETs. It is designed to minimize on-state resistance while maintaining superior switching performance. An automotive-compliant version is available under the separate part number DMN3732UVTQ. The device utilizes silicon technology and is housed in a molded plastic TSOT26 package with matte tin annealed terminals.
Replacement Considerations
An automotive-compliant substitute is available as DMN3732UVTQ. No other direct cross-references are documented in the official datasheet. When replacing, verify pinout compatibility within the TSOT26 package and ensure the replacement device meets or exceeds the 30V BVDSS and 1.1A ID ratings.
