DMN39M1LFVWQ-13

$0.22

Description：LINEAR IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:280ad05255a7 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：LINEAR IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：87A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：40 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2387 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.3W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI3333-8 (SWP) Type UX
Package / Case：8-PowerVDFN

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DMN39M1LFVWQ-13

Overview

The DMN39M1LFVWQ-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 30 V drain-source breakdown voltage and a continuous drain current of 25 A. The device exhibits a low on-resistance of 18 mΩ at a gate-source voltage of 10 V. Packaged in the compact PowerDI3333-8 format, it supports surface mount installation with an operating temperature range from -55 °C to +150 °C.

Feature Summary

Integrates a single N-channel enhancement mode MOSFET within a compact PowerDI3333-8 package for efficient space utilization.
Provides high current handling capability with a 25 A continuous drain current rating.
Ensures low conduction losses through optimized on-resistance characteristics.

Applications

Power management circuits requiring compact form factors
DC-DC converter output stages
Load switching applications

Procurement Notes

Verify the specific suffix configuration against official Diodes Incorporated documentation to ensure compatibility with design requirements. Confirm that the PowerDI3333-8 package dimensions align with PCB layout constraints. Cross-reference electrical parameters with the latest datasheet revision to account for potential manufacturing updates or specification changes.

Selection Notes

Select this component when a single N-channel MOSFET with high current capacity is required in a small footprint. The 30 V rating suits low-voltage systems. Evaluate thermal performance based on the 18 mΩ on-resistance and available board space for heat dissipation in the PowerDI3333-8 package.

Part Context

This part belongs to the DMN series of MOSFETs from Diodes Incorporated, designed for general-purpose switching applications. The PowerDI packaging family offers improved thermal performance compared to traditional plastic packages while maintaining a small outline suitable for dense circuit board layouts.