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Product Detailed Parameters
- Description：LINEAR IC
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：87A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：5mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：40 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2387 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1.3W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI3333-8 (SWP) Type UX
- Package / Case：8-PowerVDFN
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Overview
The DMN39M1LFVWQ-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a breakdown voltage (BVDSS) range of 25V to 30V and utilizes the PowerDI3333-8/SWP surface-mount package. The component supports automotive applications, indicated by the 'Q' suffix in its part number. It is supplied in tape and reel packaging with a standard quantity of 2,000 units per reel.
Feature Summary
- Automotive-grade reliability qualification
- Compact PowerDI3333-8/SWP footprint
- N-channel enhancement mode operation
Applications
- Automotive power management circuits
- Industrial load switching
- Consumer electronics power control
Procurement Notes
Verify the specific datasheet revision for the DMN39M1LFVWQ-7 to confirm exact electrical parameters such as Rds(on) and gate charge values. Ensure that the PowerDI3333-8/SWP wettable flank package requirements are compatible with your assembly process. Confirm automotive qualification status if required for your specific application environment.
Selection Notes
Select this component when a compact, automotive-qualified N-channel MOSFET with low voltage ratings is required. The PowerDI3333-8/SWP package offers improved thermal performance and solder joint visibility compared to standard packages. Consider the 25V-30V BVDSS range for systems operating within these voltage limits.
Part Context
This part belongs to Diodes Incorporated's DMN series of N-channel MOSFETs. The 'Q' suffix denotes automotive qualification, while 'SWP' indicates the Wettable Flank Package variant. It is designed for high-density PCB layouts requiring robust thermal dissipation in small form factors.
Replacement Considerations
Check for DMN39M1LFVW-7 for non-automotive versions. Verify pinout compatibility with other PowerDI3333-8 devices from different manufacturers before substitution.
