DMN4009LK3-13

$0.45

Description：MOSFET N-CH 40V 18A TO252-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:44253c947017 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 18A TO252-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：18A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：8.5mOhm @ 14A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：21 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2072 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：2.19W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252-3
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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DMN4009LK3-13

Overview

The DMN4009LK3-13 is a discontinued surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a TO-252-3 (DPAK) package with a drain connected to the exposed pad. Key electrical parameters include a drain-source breakdown voltage of 40V and a maximum continuous drain current of 27.6A at 25°C ambient temperature, derating to 18.0A at higher temperatures. The device exhibits a low on-resistance of 8.5mΩ at VGS=10V and 14mΩ at VGS=4.5V. Thermal characteristics specify a power dissipation of 4.36W in still air on a standard PCB, with an operating junction temperature range from -55°C to 150°C.

Feature Summary

Designed for high efficiency power management applications through minimized on-state resistance and superior switching performance.
Constructed using 'Green' molding compound that is RoHS compliant and free of halogens or antimony compounds.
Features a molded plastic case with UL flammability classification rating of 94V-0.

Applications

Backlighting circuits
DC-DC converters
Power management functions

Procurement Notes

This component is officially marked as discontinued by Diodes Incorporated. Verification of availability should focus on surplus distributors rather than direct manufacturer channels. Confirm the specific lot date code against project requirements, as production has ceased. Ensure compatibility with existing PCB footprints and thermal design constraints before finalizing procurement plans for legacy systems.

Selection Notes

Select this part for designs requiring a 40V N-channel MOSFET in a TO-252-3 package. Evaluate thermal performance based on the specified linear derating factor and safe operating area curves. Verify gate drive voltage levels against the threshold and on-resistance specifications at 4.5V and 10V. Consider the body diode reverse recovery characteristics for synchronous rectification or freewheeling applications.

Part Context

The DMN4009LK3-13 belongs to the DMN4009LK3 product line within Diodes Incorporated's discrete semiconductor portfolio. It is classified as a single N-channel enhancement mode field-effect transistor. The suffix '-13' indicates the reel size and tape width configuration for automated assembly. This component represents a generation of MOSFETs optimized for balancing conduction losses with switching speed.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation. As the device is discontinued, engineers must evaluate alternative components with matching voltage ratings, current capabilities, and package dimensions to ensure mechanical and electrical compatibility in existing designs.