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Product Detailed Parameters
- Description：MOSFET N-CH 40V 11.5A PWRDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：11.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：12mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：37 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1810 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：930mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：POWERDI3333-8
- Package / Case：8-PowerVDFN
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Overview
The DMN4010LFG-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 40V and a continuous drain current of 11.5A at 25°C. The device offers a maximum on-resistance of 12mΩ at VGS=10V and 15mΩ at VGS=4.5V. Total gate charge is specified as 37nC at VGS=10V and 17nC at VGS=4.5V. Input capacitance is 1810pF. It utilizes the PowerDI 3333-8 surface-mount package.
Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management applications.
- Utilizes a small, thermally efficient PowerDI 3333-8 form factor that occupies significantly less board area compared to traditional SO-8 packages.
- Qualified to AEC-Q101 standards to ensure high reliability in automotive and demanding environments.
Applications
- Backlighting circuits
- Power management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm compliance with RoHS directives and halogen-free requirements if environmental specifications are mandatory for the assembly process. Ensure the component matches the PowerDI 3333-8 mechanical dimensions during PCB layout validation.
Selection Notes
Select this component when low conduction losses are critical alongside compact board space constraints. The 40V rating suits low-voltage systems requiring moderate current handling. Evaluate thermal dissipation capabilities based on the specific copper pad layout, as power ratings vary significantly between minimum pad and optimized thermal bias configurations.
Part Context
This part belongs to the DMN40 series of N-channel MOSFETs from Diodes Incorporated. It shares the same die characteristics and electrical performance profile as the DMN4010LFG-7 variant, differing only in the manufacturer's packaging quantity designation. Both utilize the same PowerDI 3333-8 case style.
Replacement Considerations
DMN4010LFG-7
FAQ
What is the difference between the RDS(ON) values at different gate voltages?
The datasheet specifies a maximum RDS(ON) of 12mΩ when driven at 10V and 15mΩ when driven at 4.5V, indicating higher resistance at lower gate drive levels.
How does the package affect board space usage?
The PowerDI 3333-8 package is designed to occupy approximately 33% of the board area required by a standard SO-8 package, enabling higher density end products.
