DMN4020LFDE-13

Overview

The DMN4020LFDE-13 is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a U-DFN2020-6 (Type E) package with a 0.6mm profile and a PCB footprint of 4mm². The device supports a drain-source voltage (BVDSS) of 40V and offers a maximum on-resistance (RDS(ON)) of 20mΩ at VGS=10V/ID=8A, or 28mΩ at VGS=4.5V/ID=4A. Continuous drain current reaches 8.0A at TA=+25°C with VGS=10V. Total power dissipation is rated at 0.66W at TA=+25°C on an FR-4 board. Operating temperature range spans from -55°C to +150°C.

Feature Summary

• Designed for high-efficiency power management applications by minimizing on-state resistance while maintaining superior switching performance.
• Features a low-profile 0.6mm case height suitable for space-constrained designs.
• Totally lead-free, fully RoHS compliant, and halogen and antimony free.
• Qualified to JEDEC standards for high reliability.

Applications

• General purpose interfacing switch
• Power management functions

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000 units per reel packaging configuration as defined in the manufacturer's ordering information. Confirm that the component meets the required environmental compliance standards, specifically RoHS 2, RoHS 3, and the 'Green' device definition regarding bromine, chlorine, and antimony content limits. Ensure the application environment does not exceed the specified thermal resistance and power dissipation ratings under steady-state conditions.

Selection Notes

Select this component when a compact N-channel MOSFET with a 40V rating and low RDS(ON) is required for general-purpose switching or power management tasks. The U-DFN2020-6 package is appropriate for applications prioritizing a small PCB footprint and low profile. Consider the gate threshold voltage and total gate charge characteristics to ensure compatibility with the intended drive circuitry and switching frequency requirements.

Part Context

This part belongs to the DMN4020 series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series utilizes silicon technology and is housed in the U-DFN2020-6 (Type E) package. The product line is designed to balance low conduction losses with efficient switching capabilities for modern electronic systems.

Replacement Considerations

For automotive applications requiring specific change control, AEC-Q100/101/200 qualification, PPAP capability, and manufacturing in IATF 16949 certified facilities, refer to the related automotive grade parts with the Q-suffix.

FAQ

What is the maximum continuous drain current at TA = +25°C?

The maximum continuous drain current is 8.0A when VGS = 10V and 6.7A when VGS = 4.5V at TA = +25°C.

Is this component suitable for life support devices?

No, Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without express written approval.