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Product Detailed Parameters
- Description：MOSFET BVDSS: 31V~40V U-DFN2020-
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：8.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：21mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id：2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：25.3 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1201 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：850mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN2020-6 (Type E)
- Package / Case：6-PowerUDFN
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Overview
The DMN4020LFDEQ is a 40V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 40V and a continuous drain current (ID) of 8.6A at +25°C, decreasing to 6.9A at +70°C. The device exhibits a low on-resistance (RDS(ON)) of 21mΩ max at VGS=10V and 28mΩ max at VGS=4.5V. Packaged in a U-DFN2020-6 (Type E) case with a 0.6mm profile, it supports a total power dissipation of 0.85W at +25°C on a minimum pad layout. The component is AEC-Q101 qualified and suitable for automotive applications.
Feature Summary
- AEC-Q101 qualified and PPAP capable for automotive environments
- Low profile 0.6mm package design
- Low gate threshold voltage for efficient drive
- Totally lead-free and fully RoHS compliant
Applications
- General purpose interfacing switch
- Power management functions
- Automotive electronic systems requiring specific change control
Procurement Notes
Verify the part number suffix matches the required packaging quantity, as the -13 suffix indicates a 10,000-unit reel while the -7 suffix denotes a 3,000-unit reel. Confirm that the U-DFN2020-6 (Type E) footprint aligns with your PCB layout requirements. Ensure compliance with IATF 16949 manufacturing standards if the application demands strict automotive quality protocols. Check for halogen and antimony-free status if environmental regulations apply.
Selection Notes
Select this component when a compact surface-mount solution is required for 40V switching applications. The low on-resistance minimizes conduction losses, making it suitable for power management tasks. Consider the thermal resistance values provided for both minimum and full pad layouts to ensure adequate heat dissipation. Verify that the gate charge characteristics meet the driving capabilities of your controller circuit.
Part Context
This device belongs to the DMN4020 series of N-channel MOSFETs from Diodes Incorporated. It shares the same electrical specifications as the DMN4020LFDE but differs in packaging configuration. The LFDE variant specifically utilizes the U-DFN2020-6 (Type E) case, designed for low-profile applications. It is distinct from complementary dual packages or single-channel variants with different voltage ratings.
Replacement Considerations
The DMN4020LFDE is an equivalent part with identical electrical characteristics and package type. Verify that any substitute maintains the U-DFN2020-6 (Type E) footprint and meets AEC-Q101 qualification if automotive reliability is required.
