DMN4026SK3-13

$0.84

Description：MOSFET N-CH 40V 28A TO252
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:3b653476c52f Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 28A TO252
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：24mOhm @ 6A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：21.3 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1181 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：1.6W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252-3
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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DMN4026SK3-13

Overview

The DMN4026SK3-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 40V drain-source breakdown voltage and a TO-252 surface-mount package. The device provides a maximum on-resistance of 24mΩ at VGS=10V and 32mΩ at VGS=4.5V. Continuous drain current ratings are 28A at TC=+25°C and 18A at TC=+100°C. Total gate charge is 9.6nC at VGS=4.5V and 21.3nC at VGS=10V. Operating temperature ranges from -55°C to +150°C.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
Subjected to 100% Unclamped Inductive Switch (UIS) testing during production to ensure robustness against inductive load failures.

Applications

Backlighting
DC-DC Converters
Power Management Functions

Procurement Notes

Verify the component datasheet revision number matches the required design specifications, as manufacturing updates may occur without prior notice. Confirm that the TO-252 package dimensions align with the target PCB footprint layout. Ensure thermal management strategies account for the specified junction-to-case thermal resistance values under steady-state operating conditions.

Selection Notes

Select this component when low conduction losses are critical within a 40V system architecture. Evaluate the gate threshold voltage characteristics to ensure compatibility with available logic-level drive signals. Consider the total gate charge requirements relative to the driving circuit's capability to achieve optimal switching speeds.

Part Context

This part belongs to the DMN40 series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. These devices utilize silicon technology optimized for low on-resistance and fast switching capabilities. The product line targets general-purpose power switching applications requiring reliable performance in compact surface-mount configurations.

Replacement Considerations

Consult official manufacturer documentation for verified substitute part numbers before implementation. Cross-referencing electrical parameters such as breakdown voltage, on-resistance, and package type is essential to maintain circuit integrity.