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Product Detailed Parameters
- Description：MOSFET N-CH 40V 9.4A TO252 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：9.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：30mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：12.9 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：604 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：2.14W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252 (DPAK)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The DMN4030LK3Q is a 40V N-channel enhancement mode MOSFET designed for automotive applications. It features a TO-252 (DPAK) package and meets AEC-Q101 standards with PPAP capability. The device offers a maximum drain-source on-resistance of 30mΩ at VGS=10V and 50mΩ at VGS=4.5V. Continuous drain current ratings are 9.6A at TA=+25°C and 7.7A at TA=+70°C. Total power dissipation reaches 4.18W under specific PCB conditions, with an operating temperature range from -55°C to +150°C.
Feature Summary
- Qualified to AEC-Q101 standards and supported by PPAP for automotive use
- Low on-resistance for improved efficiency
- Fast switching speed capabilities
- Manufactured in IATF 16949 certified facilities
Applications
- Backlighting systems
- DC-DC converters
- Power-management functions
Procurement Notes
Verify the complete part number includes the Q suffix to confirm AEC-Q101 qualification and PPAP support. Confirm the ordering suffix matches the required packing quantity and carrier type. Ensure the procurement channel is authorized to maintain warranty validity. Check for RoHS 3 compliance requirements relevant to the target market regulations.
Selection Notes
Select this component when automotive reliability and low conduction losses are required. The TO-252 package provides adequate thermal performance for moderate power levels. Evaluate the gate threshold voltage against the driving circuit logic levels. Consider the total gate charge values for switching frequency optimization in the specific application design.
Part Context
This device belongs to the DMN4030LK3 series of N-channel MOSFETs produced by Diodes Incorporated. The series focuses on providing robust solutions for automotive environments while maintaining high electrical performance. The standard version lacks the specific automotive qualification markers found in the Q variant.
Replacement Considerations
Check datasheets for alternative parts offering similar 40V ratings and comparable RDS(ON) values. Verify pinout compatibility with the existing TO-252 footprint. Ensure replacement components meet the same AEC-Q101 and IATF 16949 manufacturing standards if automotive qualification is mandatory.
