DMN4035L-7

$0.37

Description：MOSFET N-CH 40V 4.6A SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:69ee7014124d Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 4.6A SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：4.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：42mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：12.5 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：574 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：720mW
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMN4035L-7

Overview

The DMN4035L-7 is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 40V and a continuous drain current of 4.6A at 25°C ambient temperature. The device exhibits a maximum on-resistance of 42mΩ at VGS=10V and 52mΩ at VGS=4.5V. It operates within a junction temperature range of -55°C to +150°C, with a power dissipation rating of 0.72W in steady state. Packaged in an SOT-23 case, it is supplied in reels of 3000 units.

Feature Summary

Designed for high efficiency power management applications through minimized on-state resistance and superior switching performance.
Qualified to JEDEC standards for high reliability and fully compliant with RoHS directives.
Features low input capacitance and fast switching speed characteristics.

Applications

Battery Charging
Power Management Functions
DC-DC Converters
Portable Power Adaptors

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3000-unit tape and reel packaging configuration. Confirm that the standard commercial grade part meets project requirements, as automotive-grade alternatives with AEC-Q101 qualification are available under separate datasheets. Ensure compatibility with the specified SOT-23 footprint during PCB layout.

Selection Notes

Select this component for designs requiring a compact N-channel MOSFET with a 40V breakdown voltage. Consider the thermal resistance values when calculating heat dissipation, noting that power ratings vary based on substrate copper area and thermal biasing conditions. Evaluate gate threshold voltage specifications against the driving circuit capabilities to ensure reliable turn-on.

Part Context

This component belongs to the DMN4035 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes a silicon technology process housed in a molded plastic SOT-23 case. The product line focuses on balancing low on-resistance with fast switching speeds for portable electronics and power management systems.

Replacement Considerations

For automotive applications requiring specific change control or AEC-Q101 qualification, refer to the related automotive grade part DMN4035LQ. Verify pinout and package dimensions match before substitution.

FAQ

Is this part qualified for automotive applications?

No, this specific part number is not qualified to AEC-Q100/101/200 standards. For automotive applications requiring these qualifications, the DMN4035LQ should be used.