DMN4035LQ-13

$0.49

Description：MOSFET N-CH 40V 4.6A SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:29e57b627b88 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 4.6A SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：4.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：42mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：12.5 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：574 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：720mW
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMN4035LQ-13

Overview

The DMN4035LQ-13 is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (Vdss) of 40 V and a continuous drain current (Id) of 4.6 A at 25°C ambient temperature. The device offers a maximum on-resistance (Rds(on)) of 42 mΩ at Vgs = 10 V and 52 mΩ at Vgs = 4.5 V. It operates within a junction temperature range of -55°C to +150°C and is housed in an SOT-23 package.

Feature Summary

Qualified for automotive applications with AEC-Q101 certification and PPAP capability.
Designed for low on-resistance and fast switching speed performance.
Compliant with RoHS directives and halogen-free manufacturing standards.

Applications

Battery charging systems
Power management functions
DC-DC converters
Portable power adaptors

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the component meets the required IATF 16949 facility standards for automotive change control. Ensure compatibility with the specified SOT-23 footprint and soldering profiles during integration.

Selection Notes

Select this component when a 40 V rating and high current handling are required in a compact SOT-23 form factor. Consider the thermal resistance characteristics and power dissipation limits relative to the intended PCB copper area. Evaluate gate charge requirements against driver capabilities for optimal switching efficiency.

Part Context

This part belongs to the DMN4035LQ series of single N-channel MOSFETs from Diodes Incorporated. It is specifically engineered for automotive environments requiring strict quality and reliability standards. The 'LQ' designation indicates automotive qualification, while the '-13' suffix denotes the specific bulk packaging quantity.

Replacement Considerations

The datasheet does not list official substitute part numbers. Verify pinout compatibility and electrical parameters before considering alternative manufacturers or different package types.