DMN4040SK3-13

Overview

The DMN4040SK3-13 is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a TO-252-3L package with a drain-source voltage (V_DSS) of 40 V and a maximum gate-source voltage (V_GSS) of ±20 V. The device exhibits a static drain-source on-resistance (R_DS(ON)) of 30 mΩ at V_GS = 10 V and 54 mΩ at V_GS = 4.5 V. Continuous drain current ratings include 6.0 A at T_A = +25°C under steady-state conditions, and up to 13.8 A for pulses lasting ≤10 seconds. Power dissipation is rated at 1.71 W in free air, with an operating junction temperature range from -55°C to +150°C.

Feature Summary

• Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
• Totally lead-free and fully RoHS compliant, featuring halogen and antimony-free green molding compound.
• Qualified to JEDEC standards for high reliability.
• Low input capacitance and low input/output leakage characteristics.

Applications

• Backlighting
• DC-DC converters
• Power management functions

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packing quantity of 2500 units as documented in the manufacturer's ordering information. Confirm that the component meets the required environmental specifications, including compliance with EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2), and 2015/863/EU (RoHS 3). Ensure the application design accounts for the thermal resistance parameters provided for both minimum pad layout and high coverage copper PCB configurations.

Selection Notes

Select this component for designs requiring a 40 V N-channel MOSFET in a TO-252-3L package. Evaluate the R_DS(ON) values against the expected gate drive voltage, noting the increase from 30 mΩ at 10 V to 54 mΩ at 4.5 V. Consider the thermal constraints based on the intended duty cycle and PCB copper coverage, as power dissipation varies significantly between single-sided FR-4 layouts with minimum pads versus high coverage 2oz copper areas.

Part Context

This part belongs to the DMN4040SK3 series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. It utilizes silicon technology and is housed in a molded plastic TO-252-3L package with UL flammability classification rating 94V-0. The device is designed for surface mount installation and is marked with the manufacturer logo, part number code, and date code.

Replacement Considerations

For automotive applications requiring specific change control or qualification to AEC-Q100/101/104/200 standards, consult the related automotive grade parts with the Q-suffix. Refer to the manufacturer's automotive products listing for compatible alternatives manufactured in IATF 16949 certified facilities.

FAQ

What are the continuous drain current limits for the DMN4040SK3-13?

At T_A = +25°C, the continuous drain current is 6.0 A under steady-state conditions with V_GS = 10 V. For pulses lasting ≤10 seconds, the current can reach 13.8 A under the same gate drive conditions.

How does the on-resistance vary with gate voltage?

The static drain-source on-resistance (R_DS(ON)) is specified as 30 mΩ maximum when V_GS = 10 V and ID = 12 A. At a lower gate drive of V_GS = 4.5 V, the maximum R_DS(ON) increases to 54 mΩ at ID = 6 A.