DMN4468LSS-13

$0.49

Description：MOSFET N CH 30V 10A 8SOP
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:985cb880fd60 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N CH 30V 10A 8SOP
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：14mOhm @ 11.6A, 10V
Vgs(th) (Max) @ Id：1.95V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：18.85 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：867 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：1.52W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SO
Package / Case：8-SOIC (0.154", 3.90mm Width)

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DMN4468LSS-13

Overview

The DMN4468LSS-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 30V drain-source voltage rating and a continuous drain current of 10A at +25°C. The device offers a maximum on-resistance of 14mΩ at VGS=10V and 20mΩ at VGS=4.5V. Total gate charge is 18.85nC, with turn-on rise time of 14.53ns and turn-off fall time of 6.01ns. It operates within a temperature range of -55°C to +150°C and is housed in an SO-8 package.

Feature Summary

Low on-resistance for high efficiency
Fast switching speed
Qualified to AEC-Q101 standards

Applications

Backlighting
Power management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the tape and reel packaging configuration as documented in the manufacturer's ordering information. Confirm that the component meets RoHS compliance and halogen-free requirements if environmental specifications are mandatory for the intended assembly process.

Selection Notes

Select this component when a low-voltage, high-current N-channel switch is required in an SO-8 footprint. Ensure the application voltage does not exceed the 30V breakdown rating and that the thermal design accommodates the specified power dissipation limits under expected operating conditions.

Part Context

This part belongs to the DMN4468 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management applications.