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Product Detailed Parameters
- Description：MOSFET N-CH 30V 8.6A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：8.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：14mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id：1.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：8.7 nC @ 5 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：798 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1.46W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：8-SO
- Package / Case：8-SOIC (0.154", 3.90mm Width)
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Overview
The DMN4800LSSQ-13 is an N-channel enhancement mode MOSFET designed for high-efficiency power management. It features a maximum drain-source voltage (BVDSS) of 30V and a gate-source voltage (VGSS) rating of ±25V. The device offers low on-state resistance, specified as a maximum of 14mΩ at VGS=10V with ID=9A, and 20mΩ at VGS=4.5V with ID=7A. Continuous drain current reaches 8.6A at TA=+25°C. Packaged in an SO-8 case, it supports a junction temperature range from -55°C to +150°C.
Feature Summary
- Totally lead-free and fully RoHS compliant construction
- Qualified to AEC-Q101 standards for automotive reliability
- Halogen and antimony free green device configuration
- PPAP capable for production part approval processes
Applications
- Backlighting circuits
- Power management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix matches the required packaging format. Confirm that the component meets all applicable environmental directives relevant to the target market. Ensure the selected variant aligns with the intended thermal and electrical operating conditions defined in the official datasheet specifications.
Selection Notes
Evaluate the trade-off between low on-resistance and switching performance based on the application requirements. Consider the thermal resistance characteristics when designing the PCB layout. Verify compatibility with the driving voltage levels to ensure optimal conduction states are achieved during operation.
Part Context
This component belongs to the DMN series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It utilizes silicon technology within an SO-8 surface mount package. The product line focuses on minimizing on-state resistance while maintaining superior switching capabilities for efficient power control applications.
Replacement Considerations
Consult official manufacturer documentation for verified substitute part numbers. Cross-reference pin configurations and electrical parameters before implementation.
