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Product Detailed Parameters
- Description：MOSFET BVDSS: 41V~60V SOT523 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：50 V
- Current - Continuous Drain (Id) @ 25°C：350mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 5V
- Rds On (Max) @ Id, Vgs：2Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id：1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.5 nC @ 10 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：40 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-523
- Package / Case：SOT-523
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Overview
The DMN52D0LT-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 50V and is housed in an SOT523 surface-mount package. The device offers a maximum static drain-source on-resistance (RDS(ON)) of 2.0Ω at VGS = 5V, with lower resistance values available at higher gate voltages. Continuous drain current is rated at 350mA at +25°C. Key electrical parameters include a gate threshold voltage range of 0.49V to 1.2V, total gate charge of 0.8nC at VGS=4.5V, and input capacitance of 40pF. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Low on-state resistance for high-efficiency power management
- Very low gate threshold voltage enabling low-voltage drive compatibility
- Fast switching speed supported by low input capacitance
- ESD protected gate structure
Applications
- Motor driving circuits
- Power management functions
- Load switching applications
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the 3000-unit tape and reel packaging configuration. Confirm that the component meets RoHS compliance standards and is halogen-free if required by your manufacturing specifications. Ensure the selected part number matches the exact voltage and current ratings needed for your circuit design before finalizing procurement.
Selection Notes
Select this component when a compact SOT523 footprint is required for low-current switching tasks. Consider the RDS(ON) variations across different gate drive voltages (1.8V, 2.5V, and 5V) to ensure adequate performance within your system's logic levels. Evaluate the thermal resistance characteristics against your expected duty cycles and ambient operating temperatures.
Part Context
This part belongs to the DMN52D0LT series of N-channel MOSFETs designed for general-purpose switching. It utilizes silicon technology and is packaged in a lead-free, green molding compound compliant with UL flammability rating 94V-0. The device is intended for use in consumer electronics and industrial control systems where space constraints and efficiency are critical factors.
Replacement Considerations
Consult official manufacturer documentation for qualified alternatives. Verify pinout compatibility and electrical parameter equivalence before substituting.
