DMN52D0U-7

$0.05

Description：MOSFET BVDSS: 41V~60V SOT23 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:92ebfe4db94d Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 41V~60V SOT23 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：50 V
Current - Continuous Drain (Id) @ 25°C：400mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 5V
Rds On (Max) @ Id, Vgs：2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：1.5 nC @ 10 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：39 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：500mW
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMN52D0U-7

Overview

The DMN52D0U-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 50V drain-source voltage rating and operates within a junction temperature range of -55°C to +150°C. The device provides a maximum continuous drain current of 400mA at 25°C, with an on-resistance of 2Ω at VGS=5V. Packaged in a SOT23 surface-mount format, it includes internal gate protection diodes and meets RoHS 3 standards.

Feature Summary

Designed for high-efficiency power management applications requiring low on-state resistance and superior switching performance.
Features very low gate threshold voltage (maximum 1.0V) and low input capacitance for fast switching speeds.
Includes integrated ESD protection via an internal gate protection diode.
Manufactured as a lead-free, halogen-free, and antimony-free green device compliant with RoHS 3 directives.

Applications

Load switches
Level switches

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3,000-unit reel packaging configuration. Confirm that the component meets the required automotive change control specifications if applicable, as standard parts may differ from AEC-Q100 qualified variants. Ensure the design accounts for the specified thermal resistance values under the intended PCB copper layout conditions.

Selection Notes

Select this component when a compact SOT23 package is required for low-voltage switching applications. The low gate threshold voltage makes it suitable for logic-level driving scenarios. Evaluate the thermal dissipation capabilities against the expected duty cycle and ambient temperature constraints to ensure operation remains within the safe operating area limits.

Part Context

This part belongs to the DMN52D0U series of N-channel MOSFETs from Diodes Incorporated. It is designed to minimize on-state resistance while maintaining fast switching characteristics. The product line targets general-purpose power management solutions where space efficiency and energy conservation are primary design considerations.