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Product Detailed Parameters
- Description：MOSFET 2N-CH 50V 0.35A SOT363
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：50V
- Current - Continuous Drain (Id) @ 25°C：350mA (Ta)
- Rds On (Max) @ Id, Vgs：2Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：42.3pF @ 25V
- Power - Max：300mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
- Grade：-
- Qualification：-
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Overview
The DMN52D0UDW-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 50V drain-source breakdown voltage and operates within a junction temperature range of -55°C to +150°C. The device provides a maximum continuous drain current of 350mA at 25°C, with an on-resistance (RDS(ON)) of up to 4.0Ω at VGS=1.8V and 2.0Ω at VGS=5.0V. Packaged in a compact SOT363 form factor, it includes integrated gate protection diodes for each channel.
Feature Summary
- Dual N-channel configuration with integrated gate protection diodes
- Low on-state resistance optimized for high-efficiency power management
- Very low gate threshold voltage enabling logic-level drive compatibility
- Fast switching speed supported by low input capacitance
Applications
- Load switches
- Level switches
- High-efficiency power-management applications
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit reel packaging format as defined in the manufacturer's documentation. Confirm that the component meets RoHS 3 and REACH standards if required by your supply chain regulations. Ensure the selected distributor sources directly from authorized channels to guarantee product authenticity and traceability.
Selection Notes
Select this component when a dual N-channel MOSFET with a 50V rating is required in a minimal footprint. Evaluate the RDS(ON) specifications against your specific gate drive voltages, as resistance varies significantly between 1.8V and 5.0V logic levels. Consider the thermal resistance characteristics if operating near the upper limits of the specified temperature range.
Part Context
This part belongs to the DMN52D0UDW series of dual N-channel MOSFETs designed for space-constrained portable electronics. It shares the same electrical profile as the automotive-compliant variant DMN52D0UDWQ but lacks the extended qualification requirements associated with automotive-grade components.
Replacement Considerations
No official substitutes are listed in the datasheet. When evaluating alternatives, ensure the replacement matches the SOT363 package dimensions and pinout configuration. Verify that the substitute maintains equivalent gate threshold voltage and on-resistance characteristics at your target operating currents.
