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Product Detailed Parameters
- Description：MOSFET BVDSS: 41V~60V SOT323 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：50 V
- Current - Continuous Drain (Id) @ 25°C：380mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 5V
- Rds On (Max) @ Id, Vgs：2Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.4 nC @ 10 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：39 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：400µW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-323
- Package / Case：SC-70, SOT-323
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Overview
The DMN52D0UW-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 50V drain-source breakdown voltage and operates within a junction temperature range of -55°C to +150°C. The device provides a maximum continuous drain current of 380mA at 25°C, with an on-state resistance (RDS(ON)) of 2.0Ω at VGS=5V and 2.5Ω at VGS=2.5V. Packaged in SOT323, it includes an integrated gate protection diode.
Feature Summary
- Designed for high-efficiency power management applications requiring low on-state resistance and superior switching performance.
- Features very low gate threshold voltage and low input capacitance for fast switching speeds.
- Includes built-in ESD protection and an integrated gate protection diode.
Applications
- Load switches
- Level switches
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit reel packaging configuration as defined in the manufacturer's ordering information. Confirm that the component meets RoHS 3 compliance standards and is halogen-free if required by your manufacturing specifications. Ensure compatibility with standard surface-mount assembly processes.
Selection Notes
Select this component when a compact single N-channel MOSFET is needed for low-voltage switching applications. The SOT323 package suits space-constrained designs. Evaluate thermal constraints carefully due to the limited total power dissipation rating of 0.4mW under minimum pad layout conditions. Verify that the logic-level drive voltages align with the specified RDS(ON) thresholds.
Part Context
This part belongs to the DMN52D0UW series of 50V N-channel enhancement mode MOSFETs from Diodes Incorporated. The series is engineered to minimize on-state resistance while maintaining fast switching characteristics. The product line targets portable electronics and battery-powered devices where efficiency and small form factors are critical design parameters.
Replacement Considerations
Cross-reference with other Diodes Incorporated parts in the DMN52D0UW family, such as the DMN52D0UW-7, which shares identical electrical characteristics but utilizes a 3,000-unit reel packing quantity. Verify pinout and package dimensions match before substitution.
