DMN53D0L-7

$0.19

Description：MOSFET N-CH 50V 500MA SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:3bf39674f0fb Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 50V 500MA SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：50 V
Current - Continuous Drain (Id) @ 25°C：500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
Rds On (Max) @ Id, Vgs：1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.6 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：46 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：370mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMN53D0L-7

Overview

The DMN53D0L-7 is an N-channel enhancement mode field effect transistor manufactured by Diodes Incorporated. It features a drain-source voltage (BVDSS) of 50V and a continuous drain current (ID) of 500mA at +25°C. The device offers low on-state resistance, rated at 1.6Ω at VGS = 10V and ID = 500mA, and 2.5Ω at VGS = 4.5V and ID = 200mA. It operates within a junction temperature range of -55°C to +150°C and is housed in a surface-mount SOT23 package.

Feature Summary

Designed for high-efficiency power-management applications with minimized on-state resistance and superior switching performance.
Features very low gate threshold voltage and low input capacitance for fast switching speed.
Includes built-in ESD protection and exhibits low input/output leakage currents.
Qualified to JEDEC standards for high reliability and fully compliant with RoHS directives.

Applications

High-efficiency power management circuits
Low-voltage load switch applications
Battery-powered portable devices

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the standard 3000-unit tape and reel packaging configuration. Confirm that the required automotive-grade variant, if applicable, utilizes the separate 'DMN53D0LQ' designation rather than this standard industrial part number. Ensure compatibility with the specified SOT23 footprint during procurement planning.

Selection Notes

Select this component when a 50V N-channel MOSFET with moderate current handling capability is required. The low gate threshold voltage makes it suitable for logic-level driving from microcontrollers or low-voltage power rails. Evaluate thermal dissipation requirements against the specified junction-to-ambient thermal resistance values based on the intended PCB copper layout.

Part Context

This component belongs to the DMN53D0L series of single N-channel enhancement mode MOSFETs. It is distinct from the automotive-compliant DMN53D0LQ variant and other packages within the broader DMN family. The device is designed to balance low conduction losses with efficient switching characteristics for compact electronic designs.

Replacement Considerations

For automotive applications requiring equivalent specifications, consider the DMN53D0LQ part number which holds AEC-Q101 qualification. Verify pinout and electrical parameters match before substituting with other 50V N-channel MOSFETs in the SOT23 package.