DMN53D0LDW-7

$0.23

Description：MOSFET 2N-CH 50V 0.36A SOT363
Series：-

SKU:f5c4a9b027f7 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 50V 0.36A SOT363
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：50V
Current - Continuous Drain (Id) @ 25°C：360mA
Rds On (Max) @ Id, Vgs：1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：46pF @ 25V
Power - Max：310mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-TSSOP, SC-88, SOT-363
Supplier Device Package：SOT-363
Grade：-
Qualification：-

Download product information

DMN53D0LDW-7

Overview

The DMN53D0LDW-7 is a dual N-channel enhancement mode field effect transistor manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 50V and a continuous drain current of 360mA at +25°C. The device offers a low on-state resistance of 1.6Ω at VGS=10V and 2.5Ω at VGS=4.5V. Total gate charge is 0.6nC, with input capacitance of 46pF. Power dissipation is rated at 310mW, operating within a temperature range of -55°C to +150°C.

Feature Summary

Dual N-channel configuration in a compact SOT363 surface-mount package
Optimized for high-efficiency power management with minimized on-state resistance
Fast switching speed supported by low input capacitance and total gate charge
ESD protection rated up to 2kV

Applications

DC-DC converters
Power-management functions
Battery operated systems
Solid-state relays
Drivers for relays, solenoids, lamps, hammers, displays, memories, and transistors

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the standard 3000-unit tape and reel packaging carrier. Confirm compliance requirements including RoHS directives and halogen-free status against project specifications. Ensure the component matches the DS37072 Rev. 4 datasheet revision for accurate electrical parameters.

Selection Notes

Select this component for applications requiring dual N-channel MOSFETs in small surface-mount packages. Evaluate thermal resistance characteristics given the 310mW power dissipation limit. Consider the 50V breakdown voltage and 360mA current rating relative to circuit load requirements. Verify compatibility with logic-level gate drive voltages for optimal on-resistance performance.

Part Context

This part belongs to the DMN53 series of dual N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in an SOT363 package. The device is designed to balance low on-state resistance with superior switching performance for efficient power management solutions.