DMN53D0LDWQ-13

$0.08

Description：MOSFET 2N-CH 50V 0.46A SOT363
Series：-

SKU:bcfb3f54cc33 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 50V 0.46A SOT363
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：50V
Current - Continuous Drain (Id) @ 25°C：460mA (Ta)
Rds On (Max) @ Id, Vgs：1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：1.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：49.5pF @ 25V
Power - Max：400mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-TSSOP, SC-88, SOT-363
Supplier Device Package：SOT-363
Grade：Automotive
Qualification：AEC-Q101

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DMN53D0LDWQ-13

Overview

The DMN53D0LDWQ-13 is a dual N-channel enhancement mode MOSFET in an SOT-363 package. It features a drain-source voltage of 50V and continuous drain currents of 0.46A at 25°C and 0.37A at 70°C. The on-resistance is 1.6Ω at VGS=10V and 2.5Ω at VGS=4.5V. Gate-source voltage is ±20V, with a threshold voltage range of 0.8V to 1.5V. Total gate charge is 1.4nC at VGS=10V and 0.7nC at VGS=4.5V. Operating temperature ranges from -55°C to +150°C.

Feature Summary

Dual N-channel configuration for space-efficient circuit designs
Qualified for automotive applications under AEC-Q101 standards
Low input capacitance and fast switching speed capabilities
ESD protected structure with fully lead-free and RoHS compliant construction

Applications

Backlighting circuits
Power management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix matches the required tape and reel quantity. Confirm that the component meets the PPAP requirements necessary for your specific automotive assembly line. Ensure the manufacturing facility certification aligns with your supply chain quality standards before finalizing procurement orders.

Selection Notes

Select this component when a compact dual N-channel solution is required for automotive-grade environments. Consider the low on-resistance characteristics for efficient power handling in small form factors. Evaluate the thermal resistance values against your PCB copper layout to ensure adequate heat dissipation during operation.

Part Context

This device belongs to the DMN53 series of dual N-channel MOSFETs manufactured by Diodes Incorporated. It utilizes silicon technology within a molded plastic SOT-363 case. The product is designed to meet stringent automotive reliability standards while maintaining a small surface-mount footprint for modern electronic assemblies.