DMN53D0LQ-13

$0.17

Description：MOSFET N-CH 50V 500MA SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:c43bec0bb22f Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 50V 500MA SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：50 V
Current - Continuous Drain (Id) @ 25°C：500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
Rds On (Max) @ Id, Vgs：1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.6 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：46 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：370mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMN53D0LQ-13

Overview

The DMN53D0LQ-13 is an N-channel enhancement mode field effect transistor manufactured by Diodes Incorporated. It features a drain-source voltage (BVDSS) of 50V and a continuous drain current (ID) of 500mA at +25°C. The device offers low on-state resistance, specified as 1.6Ω at VGS=10V/ID=500mA, 2.5Ω at VGS=4.5V/ID=200mA, and 4.5Ω at VGS=2.5V/ID=100mA. It operates within a junction temperature range of -55°C to +150°C and is housed in a SOT23 package.

Feature Summary

Designed for high-efficiency power-management applications with minimized on-state resistance and superior switching performance.
AEC-Q101 qualified, PPAP capable, and suitable for automotive applications requiring specific change control.
Totally lead-free, fully RoHS compliant, and halogen and antimony free.
ESD protected to 2kV.

Applications

High-efficiency power-management applications
Automotive electronics

Procurement Notes

Verify the component against the official datasheet DS38552 Rev. 4-2 to confirm electrical parameters and package dimensions. Ensure compliance with AEC-Q101 standards if used in automotive contexts. Check for RoHS and halogen-free certifications. Confirm the ordering suffix matches the required packing quantity and carrier type before finalizing procurement.

Selection Notes

Select this component for designs requiring a 50V N-channel MOSFET with low gate threshold voltage and fast switching speeds. Consider the thermal characteristics and power dissipation limits when designing heat management solutions. Verify that the operating conditions align with the specified maximum ratings and electrical characteristics provided in the datasheet.

Part Context

This part belongs to the DMN53D0L series of N-channel enhancement mode field effect transistors from Diodes Incorporated. It is designed to provide low on-resistance while maintaining fast switching capabilities. The product is manufactured in IATF 16949 certified facilities, ensuring quality standards for automotive and industrial applications.

Replacement Considerations

Consult the manufacturer's documentation for direct replacements or pin-compatible alternatives. Ensure any substitute part meets the same electrical specifications, package requirements, and qualification standards such as AEC-Q101.

FAQ

Is the DMN53D0LQ-13 suitable for automotive applications?

Yes, the DMN53D0LQ is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities, making it suitable for automotive applications requiring specific change control.