DMN55D0UTQ-7

$0.06

Description：MOSFET N-CH 50V 160MA SOT-523
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:afcf6e9a9b45 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 50V 160MA SOT-523
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：50 V
Current - Continuous Drain (Id) @ 25°C：160mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4V
Rds On (Max) @ Id, Vgs：4Ohm @ 100mA, 4V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：25 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：200mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-523
Package / Case：SOT-523

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DMN55D0UTQ-7

Overview

The DMN55D0UTQ-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (BVDSS) of 50V and a maximum continuous drain current (ID) of 160mA. The device exhibits a static drain-source on-resistance (RDS(ON)) of 4Ω at VGS = 4V and ID = 100mA, or 5Ω at VGS = 2.5V and ID = 80mA. Total gate charge (QG) is 295pC at VGS = 4V and 636pC at VGS = 8V. Input capacitance (Ciss) is 25pF. The component operates within a junction temperature range of -55°C to +150°C and is housed in an SOT523 package.

Feature Summary

Low on-resistance for high efficiency power management
Very low gate threshold voltage enabling easy drive compatibility
ESD protected gate structure up to 2kV
Totally lead-free and fully RoHS compliant

Applications

Motor driving circuits
Power management functions
Load switching applications

Procurement Notes

Verify the specific suffix 'Q' against official documentation to confirm automotive qualification status, as standard datasheets may not explicitly detail AEC-Q100 compliance for this exact ordering code. Confirm that the SOT523 tape and reel packaging quantity matches project requirements. Ensure design reviews account for the device being marked as not recommended for new designs.

Selection Notes

Select this component for low-current switching tasks requiring minimal on-state resistance. Evaluate thermal performance carefully due to the high thermal resistance of 625°C/W in the small SOT523 package. Consider the low continuous current rating of 160mA when designing load paths. Verify gate drive voltages align with the specified RDS(ON) test conditions for optimal performance.

Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are engineered to minimize on-state resistance while maintaining superior switching performance. The series targets high-efficiency power management applications where compact surface-mount footprints are required.