DMN5L06-7

$0.38

Description：MOSFET N-CH 50V 280MA SOT23-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:b7fbf1946528 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 50V 280MA SOT23-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：50 V
Current - Continuous Drain (Id) @ 25°C：280mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 2.7V
Rds On (Max) @ Id, Vgs：3Ohm @ 200mA, 2.7V
Vgs(th) (Max) @ Id：1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：350mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMN5L06-7

Overview

The DMN5L06-7 is a single N-channel enhancement mode field effect transistor manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 50 V and a continuous drain current of 280 mA at 25°C ambient temperature. The device operates within a junction temperature range of -55 to +150 °C and has a total power dissipation rating of 350 mW. Electrical characteristics include a gate threshold voltage maximum of 1.2 V at 250 μA drain current, and a static drain-source on-resistance ranging from 1.6 Ω to 4 Ω depending on the gate-source voltage and drain current conditions.

Feature Summary

Single N-channel MOSFET configuration
Low on-resistance for efficient switching
Very low gate threshold voltage
Fast switching speed with low input/output leakage

Applications

Battery-powered portable devices
Power management circuits
General-purpose switching applications

Procurement Notes

Verify the specific ordering suffix matches the required packaging format. Confirm that the component meets RoHS compliance standards and lead-free design requirements as specified in the manufacturer documentation. Ensure the package type corresponds to the intended surface mount application layout.

Selection Notes

Select this component based on its 50 V drain-source voltage rating and 280 mA continuous current capability. Consider the thermal resistance of 357 °C/W when designing heat dissipation strategies. Evaluate the low gate threshold voltage suitability for low-voltage logic control interfaces.

Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. It utilizes an SOT-23 surface mount package designed for space-constrained electronic assemblies. The device is engineered for high reliability and environmental compliance.