DMN5L06KQ-7

$0.04

Description：MOSFET N-CH 50V 300MA SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:be17a1872a48 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 50V 300MA SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：50 V
Current - Continuous Drain (Id) @ 25°C：300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 5V
Rds On (Max) @ Id, Vgs：2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：350mW
Operating Temperature：-65°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMN5L06KQ-7

Overview

The DMN5L06KQ-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (Vdss) of 50 V and a continuous drain current (Id) of 300 mA at +25°C. The device exhibits a maximum gate threshold voltage (Vgs(th)) of 1.0 V at 250µA. Static drain-source on-resistance (Rds(on)) values are specified as 2.0 Ω at Vgs = 5.0 V, 2.5 Ω at Vgs = 2.5 V, and 3.0 Ω at Vgs = 1.8 V, all tested at Id = 50 mA. Total power dissipation is rated at 350 mW with a thermal resistance junction-to-ambient of 357 °C/W. Operating temperature ranges from -65°C to +150°C.

Feature Summary

Qualified to AEC-Q101 standards for high reliability automotive applications
ESD protected up to 2kV
Totally lead-free and fully RoHS compliant
Halogen and antimony free green device

Applications

Notebook battery power management
Load switches
Level switches

Procurement Notes

Verify the specific ordering suffix 'Q' confirms automotive qualification status per manufacturer documentation. Confirm package type SOT23 and tape & reel packaging quantity of 3000 units matches project requirements. Ensure compliance with EU Directives 2002/95/EC and 2011/65/EU regarding lead-free specifications.

Selection Notes

Select this component for low-voltage switching applications requiring high reliability in automotive environments. Consider the 50V breakdown voltage and 300mA current rating against circuit demands. Evaluate Rds(on) performance at specific gate drive voltages such as 1.8V, 2.5V, or 5.0V to ensure adequate conduction efficiency.

Part Context

This part belongs to the DMN5L06K series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. The 'Q' suffix designates the automotive qualified version of the standard commercial DMN5L06K-7 device. Both variants share identical electrical characteristics and utilize the SOT23 surface mount package.