DMN5L06T-7

$0.13

Description：MOSFET N-CH 50V 280MA SOT-523
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:2376d3b4f3f7 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 50V 280MA SOT-523
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：50 V
Current - Continuous Drain (Id) @ 25°C：280mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 2.7V
Rds On (Max) @ Id, Vgs：3Ohm @ 200mA, 2.7V
Vgs(th) (Max) @ Id：1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：150mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-523
Package / Case：SOT-523

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DMN5L06T-7

Overview

The DMN5L06T-7 is an N-channel enhancement mode field effect transistor manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 50V and a continuous drain current of 280mA at 25°C. The device has a gate threshold voltage ranging from 0.49V to 1.2V at 250μA, with a static drain-source on-resistance between 1.6Ω and 4Ω depending on the test conditions. Total power dissipation is rated at 150mW, and it operates within a temperature range of -55°C to +150°C.

Feature Summary

Ultra-small surface mount package
Fast switching speed
Low input capacitance
Lead-free design compliant with RoHS standards

Applications

Battery protection circuits
Power management applications
Load switches

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the tape and reel packaging configuration when sourcing components. Confirm that the requested part number matches the exact electrical specifications outlined in the official datasheet DS30721 Rev. 3-2. Ensure compatibility with standard SOT-523 footprint layouts for proper integration into printed circuit board designs.

Selection Notes

Select this component for applications requiring low on-resistance and fast switching capabilities in a compact form factor. Consider the thermal resistance characteristics and power dissipation limits when designing heat management strategies. Evaluate the gate threshold voltage requirements against the driving logic levels available in the target system architecture.

Part Context

This component belongs to the DMN series of N-channel MOSFETs produced by Diodes Incorporated. It utilizes a SOT-523 case style designed for ultra-small surface mount applications. The device is constructed using lead-free materials and complies with environmental directives regarding restricted substances.

Replacement Considerations

Consult the manufacturer's documentation for verified substitute part numbers or alternative packages within the same product family before implementing changes.