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Product Detailed Parameters
- Description：MOSFET 2N-CH 50V 0.28A SOT563
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：50V
- Current - Continuous Drain (Id) @ 25°C：280mA
- Rds On (Max) @ Id, Vgs：3Ohm @ 200mA, 2.7V
- Vgs(th) (Max) @ Id：1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：50pF @ 25V
- Power - Max：150mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：-
- Qualification：-
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Overview
The DMN5L06V-7 is a dual N-channel enhancement mode field effect transistor manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 50 V and a continuous drain current of 280 mA at 25°C. The device operates within a temperature range of -55 to +150 °C with a total power dissipation of 150 mW. Electrical characteristics include a gate threshold voltage ranging from 0.49 V to 1.2 V, and a static drain-source on-resistance between 1.6 Ω and 4 Ω depending on the test conditions. Dynamic parameters specify an input capacitance of 50 pF and an output capacitance of 25 pF.
Feature Summary
- Dual N-channel MOSFET configuration
- Very low gate threshold voltage
- Fast switching speed
- Ultra-small surface mount package
Applications
- Battery protection circuits
- Power management applications
- Signal switching
- Load switching
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging details. Confirm that the component meets RoHS compliance requirements for your manufacturing process. Ensure the SOT-563 package orientation matches your PCB footprint design. Check moisture sensitivity level ratings before storage and reflow soldering procedures.
Selection Notes
Select this component when a compact dual N-channel solution is required for low-voltage signal or load switching. Consider the low gate threshold voltage for compatibility with low-power logic controllers. Evaluate the thermal resistance and power dissipation limits relative to the expected operating environment and PCB layout constraints.
Part Context
This component belongs to the DMN series of dual N-channel enhancement mode MOSFETs produced by Diodes Incorporated. These devices are designed for portable electronics and battery-powered applications where space efficiency is critical. The SOT-563 package provides a compact form factor suitable for high-density surface mount assembly processes.
Replacement Considerations
Consult official manufacturer substitution guides for verified alternatives. Verify pinout compatibility and electrical parameter equivalence before implementation.
