DMN5L06VK-7-79

DMN5L06VK-7-79

  • Description:MOSFET 2N-CH 50V 0.28A SOT563
  • Series:-

SKU:978f9b3eab40 Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET 2N-CH 50V 0.28A SOT563
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Bulk
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):50V
  • Current - Continuous Drain (Id) @ 25°C:280mA (Ta)
  • Rds On (Max) @ Id, Vgs:2Ohm @ 50mA, 5V
  • Vgs(th) (Max) @ Id:1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Input Capacitance (Ciss) (Max) @ Vds:50pF @ 25V
  • Power - Max:250mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:SOT-563
  • Grade:-
  • Qualification:-

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DMN5L06VK-7-79

Overview

The DMN5L06VK-7-79 is a dual N-channel enhancement mode field effect transistor manufactured by Diodes Incorporated. This component integrates two independent N-channel MOSFETs within a single compact SOT-323 surface-mount package. Designed for low-voltage applications, it operates with a drain-source voltage rating of 60V. The device utilizes advanced trench technology to achieve low on-resistance and fast switching speeds, making it suitable for power management circuits in portable electronics and battery-powered devices where space efficiency and performance are critical.

Feature Summary

  • Dual N-channel configuration in a compact SOT-323 package
  • Low on-resistance for efficient power handling
  • Fast switching capabilities for high-frequency applications

Applications

  • DC-DC converter circuits
  • Load switch applications
  • Battery protection circuits

Procurement Notes

Verify the specific suffix -7-79 against official Diodes Incorporated documentation to confirm tape and reel specifications and packaging details. Ensure compatibility with automated assembly processes by checking footprint dimensions and thermal requirements. Cross-reference part numbers with authorized distributors to avoid counterfeit components. Confirm that the operating temperature range meets your system's environmental constraints before finalizing procurement decisions.

Selection Notes

Select this component when a dual N-channel MOSFET solution is required in a minimal footprint. Consider its 60V rating and current handling capabilities relative to your circuit's load requirements. Evaluate the thermal performance characteristics if the application involves continuous high-current operation. Compare alternative packages if higher current density or different pin configurations are needed for your specific design constraints.

Part Context

This dual MOSFET belongs to Diodes Incorporated's family of low-voltage power management devices. It complements single-channel variants by offering integrated solutions for differential signaling or bridge configurations. The SOT-323 package provides a balance between electrical performance and board space savings, fitting into designs where multiple discrete transistors would otherwise consume excessive real estate.

Replacement Considerations

Consult official substitution guides from Diodes Incorporated for verified alternatives. Check pinout compatibility and electrical parameters such as Rds(on) and Vgs(th) when evaluating potential replacements. Ensure any substitute maintains the same package type or requires PCB layout modifications.

DMN5L06VK-7-79DMN5L06VK-7-79

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