DMN6013LFG-7

Overview

The DMN6013LFG-7 is a surface-mount N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 package. It features a drain-source voltage (Vdss) of 60 V and a maximum continuous drain current (Id) of 10.3 A at Ta = +25°C. The device exhibits a low on-state resistance (Rds(on)) of 13 mΩ at Vgs = 10V and 18 mΩ at Vgs = 4.5V. Total gate charge (Qg) is 55.4 nC at Vgs = 10V. Thermal characteristics include a power dissipation of 1 W at Ta = +25°C and an operating junction temperature range of -55°C to +150°C.

Feature Summary

• Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency applications.
• Utilizes a small form factor thermally efficient package that occupies only 33% of the board area compared to SO-8 packages.
• Qualified to AEC-Q101 standards to ensure high reliability in demanding environments.

Applications

• Backlighting
• Power Management Functions
• DC-DC Converters

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 2000-unit tape and reel packaging configuration as defined in the manufacturer's documentation. Confirm compliance with RoHS directives and halogen-free requirements by referencing the official product quality definitions provided by Diodes Incorporated. Ensure the component matches the PowerDI3333-8 case outline dimensions for proper PCB footprint integration.

Selection Notes

Select this component when a compact N-channel MOSFET with a 60 V rating is required for space-constrained designs. The PowerDI3333-8 package offers significant board area reduction compared to traditional SO-8 footprints. Consider the thermal resistance values and power dissipation limits relative to the intended ambient temperature conditions and PCB copper layout for optimal heat management.

Part Context

This part belongs to the DMN6013 series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It is specifically engineered for high-density power management solutions where minimizing physical footprint is critical. The device integrates advanced silicon technology to achieve low conduction losses without compromising switching speed or thermal stability.

Replacement Considerations

Direct substitutes must match the 60 V drain-source voltage, 10.3 A continuous current rating, and PowerDI3333-8 package type. Verify that alternative components meet the same Rds(on) specifications at both 10V and 4.5V gate drive voltages to ensure equivalent circuit performance.

FAQ

What is the maximum continuous drain current at an ambient temperature of +70°C?

At an ambient temperature of +70°C, the maximum continuous drain current is derated to 8.3 A.

Does the device support avalanche energy handling?

Yes, the datasheet specifies an avalanche energy rating (EAS) of 56.8 mJ with an inductance of 0.1 mH.