DMN6017SK3-13

$0.60

Description：MOSFET N-CHANNEL 60V 43A TO252
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:8fc57202f003 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CHANNEL 60V 43A TO252
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：43A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：18mOhm @ 6A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：55 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2711 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：50W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252 (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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DMN6017SK3-13

Overview

The DMN6017SK3-13 is a 60V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source on-resistance of 18mΩ at VGS=10V and 20mΩ at VGS=4.5V, supporting continuous drain currents of 43A at TC=+25°C and 34A at TC=+70°C. The device utilizes a TO252 (DPAK) case with a total power dissipation rating of 50W at TC=+25°C. Key electrical parameters include a gate threshold voltage range of 1V to 3V, a total gate charge of 55nC at VGS=10V, and an operating junction temperature range from -55°C to +150°C.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency applications.
Qualified to AEC-Q101 standards to ensure high reliability in demanding environments.
Constructed with lead-free finish, RoHS compliant materials, and halogen and antimony free green compound.

Applications

Power management functions
DC-DC converters
Industrial equipment

Procurement Notes

Verify the specific ordering suffix matches the required packaging configuration before procurement. Confirm that the component meets all applicable RoHS directives and environmental compliance standards relevant to your manufacturing region. Ensure that the thermal management design aligns with the specified power dissipation ratings under actual operating conditions to maintain device integrity.

Selection Notes

Select this component when low on-resistance and fast switching are critical for system efficiency. Evaluate the thermal resistance characteristics against the expected ambient temperatures and duty cycles. Consider the gate charge requirements relative to the driving circuit capabilities to optimize switching losses and ensure reliable operation within the specified voltage and current limits.

Part Context

This part belongs to the DMN6017SK3 series of advanced N-channel MOSFETs from Diodes Incorporated. It is housed in a surface-mount TO252 package designed for efficient heat dissipation. The series targets modern power management solutions requiring robust performance in compact form factors suitable for automated assembly processes.

Replacement Considerations

Consult official manufacturer documentation for verified equivalent parts. Cross-referencing requires matching voltage ratings, current capabilities, and package dimensions to ensure functional compatibility without redesigning the host circuit board or thermal interface.