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Product Detailed Parameters
- Description：2N7002 FAMILY SOT523 T&R 10K
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：356mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：2Ohm @ 200mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.3 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：47 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：400mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-523
- Package / Case：SOT-523
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Overview
The DMN601LT-13 is a 60V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated in an SOT523 package. It features a maximum drain-source breakdown voltage of 60V and continuous drain currents of 356mA at +25°C and 285mA at +70°C. The device exhibits low on-resistance, rated at a maximum of 2Ω at VGS=10V and 3Ω at VGS=5V. Total power dissipation reaches 0.4W to 0.5W depending on the PCB layout. Operating temperatures range from -55°C to +150°C.
Feature Summary
- Designed for high-efficiency power management applications with minimized on-state resistance.
- Features fast switching speed and low input/output leakage characteristics.
- Includes ESD protected gate structure for enhanced reliability.
- Compliant with RoHS standards and halogen-free manufacturing requirements.
Applications
- Motor controls
- Power-management functions
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the component meets all applicable environmental directives, including RoHS 2 and RoHS 3 compliance. Ensure the selected variant aligns with the required automotive or industrial qualification standards if applicable to the design.
Selection Notes
Select this component when a compact SOT523 footprint is required for low-voltage switching tasks. Evaluate the thermal resistance parameters against the expected ambient temperature and duty cycle to ensure junction temperatures remain within the specified limits. Consider the gate threshold voltage characteristics for compatibility with the intended logic drive levels.
Part Context
This part belongs to the DMN601LT series of N-channel enhancement mode MOSFETs. It utilizes silicon technology and is housed in a molded plastic SOT523 case with matte tin annealed terminals over an alloy leadframe. The product marking code '6LT' identifies the specific device type on the component surface.
Replacement Considerations
Consult official manufacturer documentation for verified substitute part numbers. Cross-referencing requires matching electrical ratings, pin configurations, and package dimensions to ensure functional equivalence without compromising circuit performance.
FAQ
What is the typical total gate charge for this MOSFET?
The typical total gate charge is 0.7nC at VGS=4.5V and 1.3nC at VGS=10V, measured under specific test conditions.
How does the on-resistance vary with junction temperature?
The on-resistance increases as the junction temperature rises, as illustrated in the typical on-resistance versus junction temperature graphs provided in the datasheet.
