DMN6022SSS-13

$0.20

Description：MOSFET N-CH 6.9A 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:32805ea684c3 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 6.9A 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：6.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：29mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：14 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2110 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2.1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SOP
Package / Case：8-SOIC (0.154", 3.90mm Width)

Download product information

DMN6022SSS-13

Overview

The DMN6022SSS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 60V and a continuous drain current (ID) of 6.9A at 25°C ambient temperature. The device offers a maximum static drain-source on-resistance (RDS(ON)) of 29mΩ at VGS=10V and ID=5A, or 34mΩ at VGS=6V and ID=5A. Packaged in an SO-8 surface mount case, it operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
Subjected to 100% Unclamped Inductive Switch (UIS) testing during production to ensure robustness against inductive load failures.
Constructed with a molded plastic case utilizing a green molding compound that is halogen-free and antimony-free.

Applications

Backlighting circuits
Power management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the tape and reel packaging format containing 2500 units per reel. Confirm compliance requirements such as RoHS 3 and REACH status directly from the manufacturer's documentation before finalizing procurement specifications.

Selection Notes

Select this component when a single N-channel MOSFET with a 60V rating and low on-resistance is required for compact designs. The SO-8 package provides a balance between thermal dissipation and board space constraints suitable for general-purpose switching applications.

Part Context

This part belongs to the DMN6022 series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series focuses on optimizing the trade-off between conduction losses and switching speed, targeting modern power supply architectures where efficiency and thermal management are critical design parameters.

Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure replacement parts match the 60V BVDSS, 6.9A ID, and SO-8 pinout configuration to maintain circuit compatibility without redesigning the PCB layout.