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Product Detailed Parameters
- Description：MOSFET N-CH 60V 5.3A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：5.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：38mOhm @ 4.3A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：22.4 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1287 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：660mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN2020-6 (Type E)
- Package / Case：6-PowerUDFN
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Overview
The DMN6040SFDEQ-13 is a single N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a U-DFN2020-6 (Type E) surface-mount package. It features a drain-source voltage rating of 60V and a maximum continuous drain current of 5.3A at 25°C. The device exhibits a typical on-resistance of 30mΩ at VGS=10V and 35mΩ at VGS=4.5V. With a total gate charge of 22.4nC at VGS=10V, it supports efficient switching. The component operates within a junction temperature range of -55°C to +150°C and is qualified to AEC-Q101 standards for automotive reliability.
Feature Summary
- Qualified to AEC-Q101 standards with PPAP capability for high-reliability automotive applications
- Features a low profile case design with a 0.6mm height and compact PCB footprint
- Includes 100% Unclamped Inductive Switching (UIS) testing during production
- Constructed with lead-free, halogen-free, and antimony-free materials
Applications
- Power management functions
- DC-DC converters
- Backlighting circuits
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration as defined in the manufacturer's documentation. Confirm that the U-DFN2020-6 (Type E) mechanical dimensions align with the target PCB pad layout requirements. Ensure compliance with RoHS directives and moisture sensitivity level 1 handling procedures during assembly.
Selection Notes
Select this component when a compact, automotive-grade N-channel MOSFET is required for power switching applications. The low on-resistance and small form factor make it suitable for space-constrained designs. Verify that the 60V breakdown voltage and 5.3A current ratings meet the circuit's operational demands under expected thermal conditions.
Part Context
This part belongs to the DMN6040 series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. The series includes various packages such as SOIC and DPAK variants. The SFDEQ designation specifically identifies the U-DFN2020-6 (Type E) package variant designed for low-profile surface mount applications.
Replacement Considerations
Consult the official datasheet for equivalent parts within the same product family or alternative manufacturers offering identical electrical characteristics and pin configurations. Ensure any substitute component maintains AEC-Q101 qualification if automotive reliability is required.
