DMN6040SK3-13

$0.44

Description：MOSFET N CH 60V 20A TO252
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:42c240e05f04 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N CH 60V 20A TO252
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：40mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：22.4 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1287 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：42W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252-3
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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DMN6040SK3-13

Overview

The DMN6040SK3-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 60V and a continuous drain current of 20A at +25°C case temperature. The device exhibits a maximum static drain-source on-resistance of 40mΩ at VGS=10V and 50mΩ at VGS=4.5V. Total gate charge is typically 22.4nC at VGS=10V. It operates within a junction temperature range of -55°C to +150°C and is housed in a TO-252 (DPAK) surface-mount package.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
Qualified to AEC-Q101 standards to ensure high reliability in automotive environments.
Totally lead-free, fully RoHS compliant, and halogen/antimony free.

Applications

DC-DC Converters
Power Management Functions
Backlighting

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the tape and reel packaging configuration containing 2,500 units per reel. Confirm that the component meets the required environmental specifications, including compliance with EU Directives 2002/95/EC and 2011/65/EU regarding restricted substances. Ensure the application design accounts for the thermal characteristics specified in the datasheet.

Selection Notes

Select this component when a single N-channel MOSFET with a 60V rating and low on-resistance is required for efficient power switching. The TO-252 package provides adequate thermal dissipation for moderate current loads up to 20A. Consider the gate threshold voltage and total gate charge values to ensure compatibility with the intended driver circuitry and switching frequency requirements.

Part Context

This part belongs to the DMN6040SK3 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is designed for general-purpose power switching applications. The device integrates a body diode and is optimized for minimizing conduction losses without compromising switching speed.

Replacement Considerations

Consult official manufacturer documentation for verified substitute part numbers. Cross-referencing should be performed based on matching electrical parameters, pin configurations, and package dimensions to ensure functional equivalence.