DMN6066SSD-13

$1.14

Description：MOSFET 2N-CH 60V 3.3A 8SO
Series：-

SKU:9fc14c689581 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 60V 3.3A 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：3.3A
Rds On (Max) @ Id, Vgs：66mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：10.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：502pF @ 30V
Power - Max：1.8W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SO
Grade：-
Qualification：-

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DMN6066SSD-13

Overview

The DMN6066SSD-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 60V and a continuous drain current of 4.4A at 25°C, dropping to 3.3A under derating conditions. The device offers a typical on-resistance of 48mΩ at VGS=10V and 68mΩ at VGS=4.5V. Packaged in an SO-8 surface-mount format, it supports a power dissipation of 1.25W and operates within a temperature range of -55°C to +150°C.

Feature Summary

Designed for high-efficiency power management with minimized on-state resistance and superior switching performance.
Includes 100% Unclamped Inductive Switch (UIS) testing during production to ensure reliability.
Compliant with RoHS standards and free from halogen and antimony compounds.

Applications

Motor controls
Backlighting circuits
DC-DC converters
Power-management functions

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packaging configuration containing 2,500 units per carrier. Confirm that the component meets the required environmental specifications, specifically the lead-free and fully RoHS compliant status mandated for the project. Ensure the SO-8 package dimensions align with the PCB footprint layout before finalizing procurement orders.

Selection Notes

Select this component when a dual N-channel configuration is required within a compact SO-8 footprint. It is suitable for applications demanding low on-resistance at standard logic gate drive voltages. Consider the thermal derating characteristics if operating in environments exceeding 25°C ambient temperature or requiring sustained high-current loads.

Part Context

This part belongs to the DMN60 series of dual N-channel MOSFETs from Diodes Incorporated. It shares the SO-8 mechanical outline with other variants in the family but differs in electrical ratings such as breakdown voltage and on-resistance. The 'SSD' designation indicates the specific package type and internal die configuration used for this product line.