DMN6068LK3-13

DMN6068LK3-13

$0.53
  • Description:MOSFET N-CH 60V 6A TO252-3
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:95a76dc0531d Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N-CH 60V 6A TO252-3
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:68mOhm @ 12A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:10.3 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:502 pF @ 30 V
  • FET Feature:-
  • Power Dissipation (Max):2.12W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:TO-252-3
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63

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DMN6068LK3-13

Overview

The DMN6068LK3-13 is a 60V N-channel enhancement mode MOSFET in a TO-252 package. It features a maximum drain-source voltage of 60V and continuous drain current ratings of 8.5A at 25°C and 7.0A at 70°C. The device offers low on-resistance, specified as 68mΩ at VGS=10V and 100mΩ at VGS=4.5V. Total gate charge is 10.3nC at VGS=10V. Power dissipation reaches 8.49W under standard PCB conditions. Operating temperature ranges from -55°C to +150°C.

Feature Summary

  • Qualified to AEC-Q101 standards for high reliability automotive applications
  • 100% Unclamped Inductive Switch (UIS) tested in production
  • Lead-free finish with RoHS compliance and halogen/antimony-free composition

Applications

  • Motor Control
  • Transformer Driving Switch
  • DC-DC Converters
  • Power Management Functions
  • Uninterrupted Power Supply

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2,500-unit reel packaging configuration. Confirm that the component meets the required environmental standards, specifically RoHS compliance and the absence of halogens and antimony. Ensure the TO-252 package dimensions align with the target printed circuit board layout requirements.

Selection Notes

Select this component for designs requiring robust switching performance combined with low conduction losses. The AEC-Q101 qualification makes it suitable for automotive environments. Evaluate thermal management strategies based on the 8.49W power dissipation rating and the specific copper area available on the PCB for optimal heat sinking.

Part Context

This part belongs to the DMN6068LK3 series manufactured by Diodes Incorporated. It is an N-channel enhancement mode MOSFET designed to minimize on-state resistance while maintaining superior switching characteristics. The product utilizes a molded plastic case with a matte tin finish over a copper leadframe.

Replacement Considerations

No public confirmed substitute part numbers are documented in the provided source material.

FAQ

What is the maximum single pulsed avalanche energy?

The maximum single pulsed avalanche energy is 37.5 mJ.

Is the device suitable for high-reliability automotive applications?

Yes, the device is qualified to AEC-Q101 standards for high reliability.

DMN6068LK3-13DMN6068LK3-13
$0.53
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