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The DMN6068LK3-13 is a 60V N-channel enhancement mode MOSFET in a TO-252 package. It features a maximum drain-source voltage of 60V and continuous drain current ratings of 8.5A at 25°C and 7.0A at 70°C. The device offers low on-resistance, specified as 68mΩ at VGS=10V and 100mΩ at VGS=4.5V. Total gate charge is 10.3nC at VGS=10V. Power dissipation reaches 8.49W under standard PCB conditions. Operating temperature ranges from -55°C to +150°C.
Verify the specific ordering suffix '-13' corresponds to the 2,500-unit reel packaging configuration. Confirm that the component meets the required environmental standards, specifically RoHS compliance and the absence of halogens and antimony. Ensure the TO-252 package dimensions align with the target printed circuit board layout requirements.
Select this component for designs requiring robust switching performance combined with low conduction losses. The AEC-Q101 qualification makes it suitable for automotive environments. Evaluate thermal management strategies based on the 8.49W power dissipation rating and the specific copper area available on the PCB for optimal heat sinking.
This part belongs to the DMN6068LK3 series manufactured by Diodes Incorporated. It is an N-channel enhancement mode MOSFET designed to minimize on-state resistance while maintaining superior switching characteristics. The product utilizes a molded plastic case with a matte tin finish over a copper leadframe.
No public confirmed substitute part numbers are documented in the provided source material.
The maximum single pulsed avalanche energy is 37.5 mJ.
Yes, the device is qualified to AEC-Q101 standards for high reliability.