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Product Detailed Parameters
- Description：MOSFET BVDSS: 41V~60V SOT223 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：4.3A (Ta), 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：69mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：16 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：825 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：1.2W (Ta), 11W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-223-3
- Package / Case：TO-261-4, TO-261AA
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Overview
The DMN6069SEQ-13 is a 60V N-channel enhancement mode MOSFET in an SOT223 package. It features a maximum on-resistance of 69mΩ at VGS=10V and 100mΩ at VGS=4.5V. Continuous drain current reaches 4.3A at TA=+25°C and 10A at TC=+25°C. The device has a gate-source voltage rating of ±20V, total gate charge of 16nC at VGS=10V, and operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Qualified to AEC-Q101 standards for automotive reliability with PPAP capability.
- Manufactured in IATF 16949 certified facilities for specific change control requirements.
- Includes 100% Unclamped Inductive Switch (UIS) testing during production.
Applications
- Motor controls
- Transformer driving switches
- DC-DC converters
- Power management functions
- Uninterrupted power supplies
Procurement Notes
Verify the component matches the exact Diodes Incorporated part number DMN6069SEQ-13. Confirm the datasheet revision is DS44584 Rev. 2-2 or later. Ensure the supplier provides traceability documentation required for AEC-Q101 qualified parts. Check that the packaging corresponds to the specified tape and reel format.
Selection Notes
Select this component when designing circuits requiring automotive-grade reliability and low on-resistance in a compact SOT223 footprint. Consider the thermal resistance values provided for both ambient and case temperatures to ensure adequate heat dissipation. Verify that the gate drive voltage meets the minimum threshold for optimal RDS(ON) performance.
Part Context
This part belongs to the DMN6069 series of N-channel MOSFETs from Diodes Incorporated. It shares similar electrical characteristics with other variants like the DMN6069SFGQ-13 but utilizes a different PowerDI3333-8 package. The SEQ suffix specifically denotes the automotive qualification and SOT223 packaging configuration.
Replacement Considerations
Direct substitutes include other AEC-Q101 qualified 60V N-channel MOSFETs in SOT223 packages. Verify pinout compatibility and thermal resistance specifications before swapping. Cross-reference with Diodes Incorporated's official replacement guide for confirmed equivalents.
