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Product Detailed Parameters
- Description：MOSFET BVDSS: 41V~60V POWERDI333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：4A (Ta), 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：69mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：14 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：740 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI3333-8 (SWP) Type UX
- Package / Case：8-PowerVDFN
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Overview
The DMN6069SFVW-13 is a 60V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes the PowerDI3333-8 package and operates within a temperature range of -55°C to +150°C. Key electrical parameters include a maximum drain-source voltage (BVDSS) of 60V, a continuous drain current (ID) of 14A at TC = +25°C, and a static drain-source on-resistance (RDS(ON)) of 69mΩ at VGS = 10V. The device features a gate threshold voltage (VGS(TH)) between 1V and 3V, a total gate charge (Qg) of 14nC at VGS = 10V, and a maximum power dissipation of 2.5W in steady state.
Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency applications.
- Features a small form factor thermally efficient package that occupies just 33% of the board area compared to SO-8 packages.
- Includes wettable flank design to facilitate improved optical inspections during manufacturing.
- Qualified to JEDEC standards for high reliability and tested 100% for unclamped inductive switching (UIS).
Applications
- Power-management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm compliance with RoHS 2, RoHS 3, and halogen-free requirements as defined by the manufacturer's green product standards. Ensure the application environment remains within the specified thermal limits and voltage ratings provided in the datasheet.
Selection Notes
Select this component when space constraints require a footprint significantly smaller than standard SO-8 packages. Consider its low RDS(ON) characteristics for minimizing conduction losses in power management circuits. Evaluate the thermal resistance values against the expected ambient temperatures and duty cycles to ensure safe operation within the junction temperature limits.
Part Context
This part belongs to the DMN6069 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It shares core electrical specifications with other variants in the family but differs in physical packaging and shipping quantities. The 'SFVW' designation indicates the specific PowerDI3333-8 case style utilized for this component.
Replacement Considerations
The automotive-compliant variant DMN6069SFVWQ serves as a direct functional replacement for applications requiring AEC-Q100/101 qualification and IATF 16949 manufacturing certification.
