DMN6069SFVW-7

$0.17

Description：MOSFET BVDSS: 41V~60V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:00d5b2deaa4d Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 41V~60V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：4A (Ta), 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：69mOhm @ 3A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：14 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：740 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI3333-8 (SWP) Type UX
Package / Case：8-PowerVDFN

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DMN6069SFVW-7

Overview

The DMN6069SFVW-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 60V drain-source breakdown voltage and utilizes the PowerDI3333-8 surface-mount package. The device offers a maximum on-resistance of 69mΩ at VGS=10V and 100mΩ at VGS=4.5V, with continuous drain currents rated at 14A (TC=25°C) or 4.0A (TA=25°C). Key electrical parameters include a gate threshold voltage of 1V to 3V, total gate charge of 14nC at VGS=10V, and a junction temperature range of -55°C to +150°C.

Feature Summary

Designed for high efficiency power management applications by minimizing on-state resistance while maintaining superior switching performance.
Features a small form factor thermally efficient package that occupies only 33% of the board area compared to SO-8 packages.
Includes wettable flank technology to improve optical inspection capabilities during manufacturing.
Qualified to JEDEC standards for high reliability and fully compliant with RoHS directives.

Applications

Power-management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging quantity and reel specifications. Confirm that the component meets all required environmental compliance standards for the target application. Ensure compatibility with the intended PCB footprint and thermal management requirements before finalizing procurement decisions.

Selection Notes

Select this component when space constraints require a compact solution smaller than traditional SO-8 packages. Consider its low on-resistance characteristics for applications prioritizing minimal conduction losses. Evaluate the thermal resistance values to ensure adequate heat dissipation within the specified operating temperature range.

Part Context

This part belongs to the DMN6069 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It shares core electrical specifications with variants such as DMN6069SFGQ-7 but differs in packaging type and automotive qualification status. The standard version focuses on general-purpose high-reliability applications rather than specific automotive change control requirements.

Replacement Considerations

For automotive applications requiring specific change control, refer to the related automotive grade part DMN6069SFVWQ. Verify pinout compatibility and thermal characteristics when substituting other MOSFETs in the same package family.

FAQ

Is the DMN6069SFVW-7 qualified for automotive applications?

No, this specific part is not qualified for automotive applications. For parts requiring AEC-Q100/101/200 qualification and IATF 16949 manufacturing, refer to the automotive grade variant DMN6069SFVWQ.