DMN6069SFVWQ-7

$0.16

Description：MOSFET BVDSS: 41V~60V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:fc2a540ba8e1 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 41V~60V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：4A (Ta), 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：69mOhm @ 3A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：14 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：740 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI3333-8 (SWP) Type UX
Package / Case：8-PowerVDFN

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DMN6069SFVWQ-7

Overview

The DMN6069SFVWQ-7 is a 60V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes the PowerDI3333-8/SWP package and meets AEC-Q101 automotive qualification standards with PPAP capability. Key electrical parameters include a maximum drain-source voltage (BVDSS) of 60V, a continuous drain current (ID) of 14A at TC=+25°C, and a static drain-source on-resistance (RDS(ON)) of 69mΩ max at VGS=10V. The device operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Designed for automotive applications requiring specific change control, qualified to AEC-Q101 and supported by PPAP.
Features wettable flank technology to improve optical inspection reliability during manufacturing.
Compliant with RoHS directives and halogen/antimony-free 'Green' device specifications.

Applications

Power-management functions
DC-DC converters

Procurement Notes

Verify that the ordering suffix matches the required packing quantity, as the -7 suffix indicates a 2,000-unit tape and reel carrier. Confirm compliance with IATF 16949 certified facility requirements if your application mandates specific automotive quality standards. Ensure the component marking code aligns with your assembly tracking protocols before finalizing procurement orders.

Selection Notes

Select this component when a compact form factor is required to maximize board density compared to traditional SO-8 packages. The low RDS(ON) characteristics are suitable for minimizing conduction losses in power management circuits. Verify that the thermal resistance values meet the system's heat dissipation requirements under steady-state and pulsed operating conditions.

Part Context

This part belongs to the DMN6069 series of N-channel MOSFETs from Diodes Incorporated. It shares the same core die and electrical specifications as variants such as DMN6069SFGQ-7 and DMN6069SFVW-13, differing primarily in packaging type and reel quantity. The PowerDI3333-8/SWP package provides a thermally efficient solution for surface-mount applications.