DMN6070SFCL-7

$0.51

Description：MOSFET N-CH 60V 3A X1-DFN1616-6
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:7a749aa16c3a Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 3A X1-DFN1616-6
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
Rds On (Max) @ Id, Vgs：85mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：12.3 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：606 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：600mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：X1-DFN1616-6 (Type E)
Package / Case：6-PowerUFDFN

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DMN6070SFCL-7

Overview

The DMN6070SFCL-7 is a surface-mount N-channel enhancement mode MOSFET from Diodes Incorporated, housed in an X1-DFN1616-6 Type E package. It features a drain-source voltage (Vdss) of 60 V and a continuous drain current (Id) of 3.0 A at +25°C. The device exhibits a maximum on-resistance (Rds(on)) of 85 mΩ at Vgs = 10V and 120 mΩ at Vgs = 4V. Total gate charge (Qg) is 12.3 nC at Vgs = 10V. Power dissipation reaches 0.6 W on FR-4 without thermal vias and 1.8 W with them. Operating junction temperature ranges from -55°C to +150°C.

Feature Summary

Designed for high efficiency power management applications by minimizing conduction losses while maintaining superior switching performance.
Features a typical off-board profile of 0.5mm, making it ideally suited for thin electronic applications.
Qualified to AEC-Q101 standards for high reliability in automotive environments.
Totally lead-free, fully RoHS compliant, and halogen and antimony free.

Applications

Power Management Functions
Analog Switch

Procurement Notes

Verify the component against official Diodes Incorporated datasheet DS36502 Rev. 3-2 to confirm authenticity. Ensure the marking code matches the specified format. Check for compliance with environmental directives such as RoHS and REACH. Confirm that the supplier provides traceability documentation. Validate the package type and pin configuration before integration into the design.

Selection Notes

Select this component when a low-profile N-channel MOSFET with 60V capability is required. Consider its Rds(on) specifications at both 10V and 4V gate drive voltages for efficiency calculations. Evaluate the thermal resistance values based on the intended PCB copper area and via usage. Ensure the application does not involve life support systems without explicit manufacturer approval.

Part Context

This part belongs to the DMN6070 series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It utilizes the X1-DFN1616-6 Type E package, which offers a compact footprint suitable for space-constrained designs. The series is engineered to balance low on-state resistance with fast switching characteristics for modern power management circuits.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material. Verify compatibility with existing designs by comparing electrical parameters and physical dimensions with alternative components from other manufacturers.