DMN6070SY-13

$0.51

Description：MOSFET N-CH 60V 4.1A SOT89-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:8f6182dd18bd Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 4.1A SOT89-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：4.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：85mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：12.3 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：588 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2.1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-89-3
Package / Case：TO-243AA

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DMN6070SY-13

Overview

The DMN6070SY-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (BVDSS) of 60V and a continuous drain current (ID) of 4.1A at +25°C. The device offers a maximum on-resistance (RDS(ON)) of 85mΩ at VGS=10V and 110mΩ at VGS=4.5V. Packaged in SOT89, it operates within a temperature range of -55°C to +150°C.

Feature Summary

Designed for high-efficiency power-management applications with minimized on-state resistance
Maintains superior switching performance alongside low input capacitance
Features low gate threshold voltage for efficient drive requirements

Applications

DC-DC converters
Power-management functions
Backlighting

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2,500-unit reel packaging configuration as documented. Confirm that the component meets RoHS 3 compliance and is halogen-free if environmental specifications are required for the assembly process. Ensure the SOT89 package dimensions align with the target PCB footprint layout.

Selection Notes

Select this component when a 60V N-channel MOSFET is required in an SOT89 package. Evaluate the thermal resistance values based on the intended copper pad layout, as power dissipation varies significantly between single-sided FR-4 and two-ounce copper substrates. Consider the gate charge characteristics for switching frequency requirements.

Part Context

This part belongs to the DMN6070SY series from Diodes Incorporated. It is a silicon-based N-channel enhancement mode MOSFET designed to balance low conduction losses with fast switching speeds. The product is marketed as a 'Green' device, indicating it is lead-free, halogen-free, and antimony-free according to manufacturer definitions.