DMN60H080DS-13

$0.26

Description：MOSFET N-CH 600V 80MA SOT23-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:00f9fa40b0c1 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 600V 80MA SOT23-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：80mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：100Ohm @ 60mA, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：1.7 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：25 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1.1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMN60H080DS-13

Overview

The DMN60H080DS-13 is an N-channel enhancement mode field MOSFET manufactured by Diodes Incorporated. It features a 600V drain-source breakdown voltage and a maximum continuous drain current of 80mA at +25°C. The device exhibits a typical on-resistance of 100Ω at VGS = 10V and 290Ω at VGS = 4.5V. Packaged in SOT23, it operates within a temperature range of -55°C to +150°C.

Feature Summary

Advanced planar technology providing excellent high-voltage handling and fast switching capabilities.
Low input capacitance and low input/output leakage characteristics for efficient signal processing.
Integrated ESD protection diode structure for enhanced circuit reliability.

Applications

Motor controls
Backlighting circuits
DC-DC converters
Power-management functions

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the component meets RoHS 2/3 compliance standards and is halogen-free. Ensure the selected package variant matches the required PCB footprint dimensions for the SOT23 form factor.

Selection Notes

Select this component for applications requiring high-voltage isolation in small-signal environments. Evaluate the thermal resistance parameters against the expected power dissipation limits. Consider the gate threshold voltage specifications when designing the driving circuitry for optimal switching performance.

Part Context

This part belongs to the DMN60H series of N-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are designed using advanced planar technology to deliver robust performance in compact packages suitable for modern electronic designs.

Replacement Considerations

Consult official documentation for verified substitutes such as the DMN60H080DS-7, which shares identical electrical characteristics but utilizes a different packing quantity carrier.