DMN60H080DS-7

$0.35

Description：MOSFET N-CH 600V 80MA SOT23-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:38745f99b525 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 600V 80MA SOT23-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：80mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：100Ohm @ 60mA, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：1.7 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：25 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1.1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMN60H080DS-7

Overview

The DMN60H080DS-7 is an N-channel enhancement mode field-effect transistor manufactured by Diodes Incorporated. It utilizes advanced planar technology to deliver high voltage handling and fast switching capabilities within a compact SOT23 surface-mount package. The device features a drain-source breakdown voltage of 600V and a continuous drain current rating of 80mA at 25°C. Its static on-resistance is specified at 100Ω when the gate-source voltage is 10V, making it suitable for low-current signal applications.

Feature Summary

Advanced planar technology provides excellent high-voltage performance and fast switching characteristics.
Low input capacitance and low input/output leakage currents optimize signal integrity.
Integrated ESD protection diode enhances component reliability in sensitive circuits.

Applications

Motor controls
Backlighting
DC-DC converters
Power-management functions

Procurement Notes

Verify that the specific ordering suffix matches the required tape and reel quantity. Confirm compliance with RoHS directives and halogen-free requirements if mandated by project specifications. Ensure the selected variant aligns with the intended thermal management strategy given the small form factor.

Selection Notes

Select this component for designs requiring high voltage isolation in minimal space. Evaluate the 100Ω on-resistance against load requirements to ensure adequate drive capability. Consider the 600V breakdown voltage margin relative to peak transient voltages present in the target circuit topology.

Part Context

This part belongs to the DMN60H series of high-voltage MOSFETs from Diodes Incorporated. The series focuses on providing robust performance in small-signal environments where standard logic-level devices would fail due to voltage stress limitations.